s m d ty p e s m d ty p e m o s f e t 1 w w w . k e x i n . c o m . c n dual n-channel m osfet features r ds(on) = 0. 027 @ v gs = 4.5 v r ds(on) = 0.036 @ v gs = 2. 5 v. absolute maxim um rating s t a = 2 5 paramet er sym bol 10 sec steady state unit dra in-sour ce v oltage v ds v gate-sour ce v oltage v gs v continuo us drain curr ent i d 8.2 6.2 a pulsed drain cur rent i dm a ma x im um pow er dissipati on @t a = 25 2.0 1.14 w @t a = 70 1.3 0.72 w thermal resi st ance,junct ion-to-ambient r ja /w jum ct ion tem pera ture and storage tem pera ture t j . t stg 110 -55 to +150 p d 20 10 30 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 5 6 7 8 2 3 4 1 g 1 d 1 s 1 g 2 d 2 s 2 si9 9 2 6 bdy ( k i 9 9 2 6 b d y ) sop -8 0.21 +0.04 -0.02 1.50 0.15
s m d ty p e 2 s m d ty p e w w w . k e x i n . c o m . c n m o s f e t el ectrical characteris tics t a = 2 5 paramet er sym bol test c onditions min typ ma x unit dra in-sour ce b reakdow n voltage v dss v gs = 0 v , i d = 250 a 20 v zero gate voltage dra in curr ent i dss v ds = 20v , v gs = 0v 1 a gate threshold voltage v gs(th) v ds = v gs , i d = 250ua 0.5 1.5 v gate-body leakage i gss v ds = 0v , v gs = 8v 100 na v gs = 4.5v , i d = 8.5a 0.020 0.027 v gs = 2.5v , i d = 3.3a 0.029 0.036 on-state drain cu rre nt * i d(on) v ds = 5v , v gs = 4.5v 30 a forw ard tra nsconductance * g fs v ds = 15v , i d =8.2a 29 s total gate charge q g 11 20 gate-sour ce charge q gs 2.5 gate-d rain ch arge q gd 3.2 turn- on delay tim e t d(on ) 36 57 rise tim e t r 52 78 turn- off delay tim e t d(of f) 32 50 fall tim e t f 15 25 ma x im um continuou s dra in-sour ce diode forw ard cu rre nt i s 0.95 a diode forw ard voltage * v sd i s = 1.7a, v gs = 0 v 0.8 1.2 v * puls e test ; puls e w idth 300 s, duty cycle 2 % . v dd = 10v, i d = 1a , v gs = 4.5v , r g = 6 ,r l = 10 v ds = 10v , v gs = 4.5v , i d = 8.2a ns nc dra in-sour ce on-state resist ance * r ds(on) si9 9 2 6 bdy ( k i 9 9 2 6 b d y ) m a r k i n g 9926b k a* * * * m a r k i n g
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